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AUTOMOTIVE GRADE
PD - 96296
AUIRF1324S-7P
Features
l l l l l l l
HEXFET(R) Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
V(BR)DSS RDS(on) typ. max.
24V 0.8m 429A c 240A 1.0m
G S
S (Pin 2, 3, 5, 6, 7) G (Pin 1)
ID (Silicon Limited) ID (Package Limited)
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D
S G S S
S
S
D 2Pak 7 Pin
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS (Thermally limited) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche CurrentAd Repetitive Avalanche Energy
Max.
429 303 240 1640 300 2.0 20 230 See Fig. 14, 15, 22a, 22b, 1.6 -55 to + 175 300 (1.6mm from case)
Units
A
d
W W/C V mJ A mJ V/ns C
e
Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
f
d
Thermal Resistance
RJC RJA Junction-to-Case
Junction-to-Ambient (PCB Mount) , D2Pak
k
Parameter
Typ.
Max.
0.50 40
Units
C/W
j
--- ---
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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03/25/10
AUIRF1324S-7P
Static Characteristics @ TJ = 25C (unless otherwise stated)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs RG IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Internal Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
24 --- --- 2.0 270 --- --- --- --- --- --- --- 0.023 --- 0.80 1.0 --- 4.0 --- --- 3.0 --- --- 20 --- 250 --- 200 --- -200
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mA m VGS = 10V, ID = 160A V VDS = VGS, ID = 250A S VDS = 50V, ID = 160A VDS = 24V, VGS = 0V A VDS = 19V, VGS = 0V, TJ = 125C VGS = 20V nA VGS = -20V
g
g
Dynamic Characteristics @ TJ = 25C (unless otherwise stated)
Parameter
Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
180 47 58 122 19 240 86 93 7700 3380 1930 4780 4970 252 --- --- --- --- --- --- --- --- --- --- --- --- nC
Conditions
ID = 75A VDS =12V VGS = 10V ID = 75A, VDS =0V, VGS = 10V VDD = 16V ID = 160A RG =2.7 VGS = 10V VGS = 0V VDS = 19V = 1.0MHz, See Fig.5 See Fig.11 VGS = 0V, VDS = 0V to 19V VGS = 0V, VDS = 0V to 19V
--- --- --- --- --- --- --- --- --- --- --- Effective Output Capacitance (Energy Related) --- --- Effective Output Capacitance (Time Related)
g
g
ns
g
pF
i, hA
Diode Characteristics
Parameter
IS ISM VSD trr Qrr IRRM ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ad Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- 429 --- 1636 A
Conditions
MOSFET symbol showing the integral reverse
D
G S
p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 160A, VGS = 0V VR = 20V, TJ = 25C --- 71 107 ns IF = 160A TJ = 125C --- 74 110 di/dt = 100A/s TJ = 25C --- 83 120 nC TJ = 125C --- 92 140 --- 2.0 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
g
Notes: Calculated continuous current based on maximum allowable junction ISD 160A, di/dt 600A/s, VDD V(BR)DSS, TJ 175C. temperature. Package limitation current is 240A. Note that current Pulse width 400s; duty cycle 2%. limitations arising from heating of the device leads may occur with Coss eff. (TR) is a fixed capacitance that gives the same charging time some lead mounting arrangements.(Refer to AN-1140 as Coss while VDS is rising from 0 to 80% VDSS . Coss eff. (ER) is a fixed capacitance that gives the same energy as http://www.irf.com/technical-info/appnotes/an-1140.pdf Coss while VDS is rising from 0 to 80% VDSS. Repetitive rating; pulse width limited by max. junction When mounted on 1" square PCB (FR-4 or G-10 Material). For recom temperature. mended footprint and soldering techniques refer to application note #AN-994. Limited by TJmax, starting TJ = 25C, L = 0.018mH R is measured at TJ approximately 90C RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value.
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AUIRF1324S-7P
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D2 PAK 7 Pin Class M4 AEC-Q101-002 Class H3A AEC-Q101-001 Class C5 AEC-Q101-005 Yes MSL1
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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AUIRF1324S-7P
1000
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
1000
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
100
100 4.5V
4.5V 10 0.1 1
60s PULSE WIDTH Tj = 25C
60s PULSE WIDTH Tj = 175C
10 100 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
10
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig 2. Typical Output Characteristics
1.8 ID = 160A 1.6 1.4 1.2 1.0 0.8 0.6 VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175C
10 TJ = 25C 1 VDS = 15V 60s PULSE WIDTH 0.1 2 3 4 5 6 7 8 9
-60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 4. Normalized On-Resistance vs. Temperature
12.0 ID= 75A
VGS, Gate-to-Source Voltage (V)
10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
VDS= 19V VDS= 12V
10000
Ciss Coss Crss
1000 1 10 VDS, Drain-to-Source Voltage (V) 100
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRF1324S-7P
1000
10000
OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
T J = 175C 100
ID, Drain-to-Source Current (A)
1000 1msec 100sec
100 10msec
T J = 25C 10
10 Tc = 25C Tj = 175C Single Pulse 1 0 1 DC
VGS = 0V 1.0 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V)
10
100
Fig 7. Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8. Maximum Safe Operating Area
32 Id = 5mA 31 30 29 28 27 26 25 24 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C )
VDS, Drain-to-Source Voltage (V)
450 400 350
ID, Drain Current (A)
Limited By Package
300 250 200 150 100 50 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10. Drain-to-Source Breakdown Voltage
1000 900 800 700 600 500 400 300 200 100 0 25 50 75 100 125 150 175 ID TOP 45A 80A BOTTOM 160A
1.4 1.2 1.0
Energy (J)
0.8 0.6 0.4 0.2 0.0 -5 0 5 10 15 20 25
Fig 11. Typical COSS Stored Energy
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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AUIRF1324S-7P
1
Thermal Response ( Z thJC ) C/W
D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01
J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.02070 0.08624 0.24491 0.15005
i (sec)
0.000010 0.000070 0.001406 0.009080
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1
0.001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100 0.05 0.10 10
0.01
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01
Fig 14. Typical Avalanche Current vs.Pulsewidth
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AUIRF1324S-7P
250 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 160A
EAR , Avalanche Energy (mJ)
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figure 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
175
0 25 50 75 100 125 150 Starting T J , Junction Temperature (C)
PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 15. Maximum Avalanche Energy vs. Temperature
4.5
VGS(th) , Gate threshold Voltage (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) ID = 250A ID = 1.0mA ID = 1.0A
Fig 16. Threshold Voltage Vs. Temperature
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7
AUIRF1324S-7P
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit
LD VDS
Fig 22b. Unclamped Inductive Waveforms
VGS
+
VDD -
90%
D.U.T VGS
Second Pulse Width < 1s Duty Factor < 0.1%
10%
VDS
td(off) tf td(on) tr
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id Vds Vgs
L
0
DUT 1K 20K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
8
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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AUIRF1324S-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
Part Number
AUIRF1324S-7
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1324S-7P
D2Pak - 7 Pin Tape and Reel
10
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AUIRF1324S-7P
Ordering Information
Base part number AUIRF1324S-7P Package Type D2Pak Standard Pack Form Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 800 800 AUIRF1324S-7P AUIRF1324S-7PTRL AUIRF1324S-7PTRR
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AUIRF1324S-7P
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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